Reduction of lattice relaxation in thick strained InAs layer during growth interruption

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 112-115

  Nakayama, T ^a   Miyamoto, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

HETEROJUNCTION FIELD EFFECT TRANSISTORS; LATTICE RELAXATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0032288808     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)