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Volumn , Issue , 1998, Pages 769-772
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InAs-dot/GaAs structures site-controlled by in situ EB lithography and self-organizing MBE growth
a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
FABRICATION;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
INDIUM ARSENIDE DOTS;
SELF ORGANIZING MOLECULAR BEAM EPITAXY;
SEMICONDUCTOR DEVICE STRUCTURES;
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EID: 0032287490
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (15)
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