UV-250 patterning of sub-micron tapered active layers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 284-287

  Tregoat, D ^a   Colson, V ^a   Coquard, J ^a   Le Gouezigou, L ^a   Lestra, A ^a   Pinquier, A ^a   Poingt, F ^a   Fernier, B ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

FABRY PEROT LASERS; GAS SOURCE MOLECULAR BEAM EPITAXY; ULTRAVIOLET PATTERNING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032287450     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)