Índice de refracción del semiconductor AgGaSe2 bajo alta presión

Revista Mexicana de Fisica

Volumn 44, Issue SUPPL. 3, 1998, Pages 232-235

  Calderon E ^a   Gonzalez J ^a   Chervin, J C ^b  

^a UNIVERSIDAD DE LOS ANDES   (Venezuela)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

High pressures; I III VI2; Optical properties; Phase transitions

Indexed keywords

EID: 0032286127     PISSN: 0035001X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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