Calculating plasma damage as a function of gate oxide thickness

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 42-45

  Linder, Barry P ^a   Cheung, Nathan W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CORRELATION METHODS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MODELS; STRESS ANALYSIS;

ANODE HOLE INJECTION MODEL; LOAD LINE ANALYSIS;

GATES (TRANSISTOR);

EID: 0032284944     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)