〈012〉-oriented growth of the films LaNiO3/SiO2/Si(111) by pulsed laser deposition

Journal of Materials Science

Volumn 33, Issue 23, 1998, Pages 5631-5635

  Yin, J ^a   Chen, X Y ^a   Li, Q C ^a   Liu, X Y ^a   Liu, Z G ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; SURFACE ROUGHNESS; THIN FILMS;

FERROELECTRIC MEMORY DEVICES;

DIELECTRIC FILMS;

EID: 0032277599     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1004424517453     Document Type: Article

References (12)

1. J. F. SCOTT and C. A. PAZ de ARAUJO, Science 246, 1400 (1989).
2. S. K. DEY and R. ZULEEG, Ferroelectrics 108, 37 (1990).
3. P. M. RACCAH and J. B. GOODENOUGH, J. Ppl. Phys. 39, 1209 (1968).
4. B. H. MOECKLY, S. E. RUSSEK, D. K. LATHROP, R. A. BUHRMAN, J. LI and J. W. MAYER, Appl. Phys. Lett. 57, 1687 (1990).
5. J.-M. TRISCONE, M. G. KARKUT, D. BRUNNER, L. ANTOGNASZZA, M. DECROUX and O. FISHER, Phys. Rev. Lett. 57, 1687 (1990).
6. H. MAIWA, N. LCHINOSE and K. OKAZAKI, Jpn. J. Appl. Phys. Vol. 33, 5223 (1994).
7. H. ICHINOSE MAGANO, H. KATSUKI and H. TAKAGI, Journal of Material Science 29, 5115 (1994).
8. T. NAKAMURA, G. PETZOW, L. J. GRAUCKLER, Mat. Res. Bull. 14, 699 (1979).
9. A. WOLD, R. J. ARNOTT, J. Phys. Chem. Solid 9, 176 (1959).
10. C. C. YANG, M. S. CHEN, T. J. HONG, C. M. WU, J. M. WU, T. B. WU, Appl. Phys. Lett. 66, 2643 (1995).
11. K. SCEEDHAR, M. MCELFRESH, D. PERRY, D. KIM, P. METCALF and J. M. HONIG, Journal of Solid State Chemistry 110, 208 (1994).
12. J. T. CHEUNG, P. E. D. MORGAN, D. H. LOWNDES and X.-Y. ZHENG, Appl. Phys. Lett. 62, 2045 (1993).