Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation

IEEE International Symposium on Applications of Ferroelectrics

Volumn , Issue , 1998, Pages 147-150

  Friessnegg, T ^a   Aggarwal, S ^a   Nielsen, B ^a   Ramesh, R ^a   Keeble, D J ^a   Poindexter, E H ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL DEFECTS; DOPING (ADDITIVES); DOPPLER EFFECT; FERROELECTRIC MATERIALS; FILM GROWTH; LANTHANUM; LEAD COMPOUNDS; OXYGEN; PARTIAL PRESSURE; THIN FILMS;

POSITRON ANNIHILATION; VACANCY-RELATED DEFECTS;

DIELECTRIC FILMS;

EID: 0032276020     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (14)