A new 800 V RESURF LDMOSFET with high SOA performance by using double-diffused drift region

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Jin, Jun Hee ^a   Kwon, Oh Kyong ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032274661     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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