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Volumn 1998, Issue , 1998, Pages 2-9

Introducing the Emitter Turn-Off Thyristor (ETO): Numerical and experimental demonstration of unity turn-off gain capability

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONICS PACKAGING; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; NUMERICAL ANALYSIS; POWER ELECTRONICS; TECHNOLOGY;

EID: 0032273261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (4)

References (11)
  • 3
    • 0000402431 scopus 로고    scopus 로고
    • High power hard-Driven GTO Module for 4.5-kV/3-kA Snubberless Operation
    • Gruning, H., et al., "High power hard-Driven GTO Module for 4.5-kV/3-kA Snubberless Operation", PCIM'96 Conf. Proc., 1996, pp. 169-183
    • (1996) PCIM'96 Conf. Proc. , pp. 169-183
    • Gruning, H.1
  • 5
    • 0031381277 scopus 로고    scopus 로고
    • An Improved Gate Control Scheme for Snubberless Operaton of High Power IGBTs
    • New Orleans, Louisiana, Oct. 5-9
    • Hwang-Geol Lee, Yo-han Lee, Bum-Seok Suh, Dong-Seok Hyun, "An Improved Gate Control Scheme for Snubberless Operaton of High Power IGBTs", IEEE Industry Applications Society Annual Meeting, New Orleans, Louisiana, Oct. 5-9, 1997, pp. 975-982
    • (1997) IEEE Industry Applications Society Annual Meeting , pp. 975-982
    • Lee, H.-G.1    Lee, Y.-H.2    Suh, B.-S.3    Hyun, D.-S.4
  • 6
    • 0345208993 scopus 로고    scopus 로고
    • The Emitter Turn-Off Thyristor - A New MOS-Bipolar High Power Device
    • Sept. 28-30
    • Y. Li and Alex Huang, "The Emitter Turn-Off Thyristor - A New MOS-Bipolar High Power Device", 1997 VPEC Annual Seminar Proceeding, Sept. 28-30, 1997, pp. 179-183
    • (1997) 1997 VPEC Annual Seminar Proceeding , pp. 179-183
    • Li, Y.1    Huang, A.2
  • 7
    • 0344078362 scopus 로고
    • Performance Limitation of a GTO with Near-Perfect Technology
    • June
    • Andre A. Jaecklin, "Performance Limitation of a GTO with Near-Perfect Technology", IEEE Transactions on Electron Devices, Vol. 39, No.6, June 1992, pp. 1507-1513
    • (1992) IEEE Transactions on Electron Devices , vol.39 , Issue.6 , pp. 1507-1513
    • Jaecklin, A.A.1
  • 8
    • 0030659267 scopus 로고    scopus 로고
    • Hybrid 3000A-MOSFET for GTO Cascode switches
    • J. Oetjen, R. Sittig, "Hybrid 3000A-MOSFET for GTO Cascode switches", Proc. ISPSD'97, pp.241
    • Proc. ISPSD'97 , pp. 241
    • Oetjen, J.1    Sittig, R.2
  • 10
    • 0003547182 scopus 로고    scopus 로고
    • Palo Alto, CA, USA
    • Technology Modeling Associates, Inc., MEDICI User's Manual, Palo Alto, CA, USA, 1997.
    • (1997) MEDICI User's Manual


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.