Hot carrier reliability considerations in the integration of dual gate oxide transistor process on a sub-0.25 μm CMOS technology for embedded applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 931-934

  Bhat, N ^a   Chen, P ^a   Tsui, P ^a   Das, A ^a   Foisy, M ^a   Shiho, Y ^a   Higman, J ^a   Nguyen, J Y ^a   Gonzales, S ^a   Collins, S ^a   Workman, D ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOT CARRIERS; OXIDES;

DUAL GATE TRANSISTOR PROCESSES;

GATES (TRANSISTOR);

EID: 0032272386     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)