Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

Electronics Letters

Volumn 34, Issue 25, 1998, Pages 2441-2442

  Gwilliam, R M ^a   Hutchinson, S ^a   Shannon, J M ^a   Emerson, N G ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ION IMPLANTATION; SEMICONDUCTING GLASS;

COBALT IMPLANTATION; SCHOTTKY CONTACTS;

AMORPHOUS SILICON;

EID: 0032272357     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981658     Document Type: Article

References (4)

1. TANAKA, S., TAGAMI, T., YAMAOKO, T., OYOSHI, K., and ARIMA, Y.: 'Ion implantation for large-area optoelectronics on glass substrates', Nucl. Instrum. Methods Phys. Res. B, 1993, 74, pp. 317-321
2. ANDOH, Y., and MATSUDA, K.: 'Application of a large area ion doping technique to a-Si:H TFT for LCD' in DOWNEY, D.F., FARLEY, M., JONES, K.S., and RYDING, G. (Eds.): 'Ion implantation technology' (Elsevier, 1993), 92, pp. 661-666
3. 2', Nucl. Instrum. Methods Phys. Res. B, 1993, 74, pp. 331-335
4. SEALY, B.J., TAN, B.L., GWILLIAM, R.M., REESON, K.J., and JEYNES, C.: ", Electron. Lett., 1989, 25, (22), pp. 1532-1533