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Volumn 1, Issue , 1998, Pages 71-74
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Modeling and stability in MOS transistor circuits
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRONICS INDUSTRY;
ASYMPTOTIC STABILITY;
ELECTRIC NETWORK ANALYSIS;
LAGRANGE MULTIPLIERS;
MATHEMATICAL MODELS;
MATHEMATICAL TRANSFORMATIONS;
MOS DEVICES;
SEMICONDUCTOR DEVICE MODELS;
DEVELOPED MODEL;
DYNAMIC CIRCUITS;
EQUILIBRIUM POINT;
GLOBALLY ASYMPTOTICALLY STABLE;
INDEPENDENT SOURCES;
LAGRANGE;
LARGE SIGNAL MODELING;
TRANSISTOR CIRCUIT;
FIELD EFFECT TRANSISTORS;
TRANSISTORS;
SHICHMAN-HODGES LARGE SIGNAL MODEL;
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EID: 0032271501
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICECS.1998.813273 Document Type: Conference Paper |
Times cited : (5)
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References (8)
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