Stress-induced leakage current due to charging damage: Gate oxide thickness and gate poly-Si etching condition dependence

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 56-59

  Park, Donggun ^a   Kennard, Mark ^a   Melaku, Yosias ^a   Benjamin, Neil ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CHARGE; GATES (TRANSISTOR); LEAKAGE CURRENTS; PLASMA DENSITY; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; RELIABILITY; SEMICONDUCTING SILICON; STRESS ANALYSIS; THIN FILM TRANSISTORS; ULTRATHIN FILMS;

ANTENNA RATIO; PLASMA CHARGING; STRESS-INDUCED LEAKAGE CURRENTS (SILC);

MOSFET DEVICES;

EID: 0032269714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)