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Volumn 210, Issue 2, 1998, Pages 747-751

Nonlinear zeeman splitting of the Si:Be-s acceptor ground state: Influence of the p1/2 split-off valence band?

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EID: 0032267016     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<747::AID-PSSB747>3.0.CO;2-5     Document Type: Article
Times cited : (3)

References (12)
  • 5
    • 85033880116 scopus 로고
    • Thesis, University of Erlangen-Nürnberg (Germany), (in German)
    • P. STOLZ, Thesis, University of Erlangen-Nürnberg (Germany), 1990 (in German).
    • (1990)
    • Stolz, P.1
  • 7
    • 25944450582 scopus 로고
    • Proc. 3th internat. conf. shallow impurities in semiconductors
    • Linköping (Sweden), Ed. B. MONEMAR
    • A. KÖPF, A. AMBROSY, and K. LASSMANN, Proc. 3th Internat. Conf. Shallow Impurities in Semiconductors, Linköping (Sweden), Ed. B. MONEMAR, Inst. Phys. Conf. Ser. No. 95, 131 (1989).
    • (1989) Inst. Phys. Conf. Ser. No. 95 , vol.95 , pp. 131
    • Köpf, A.1    Ambrosy, A.2    Lassmann, K.3
  • 10
    • 0012826031 scopus 로고
    • G. D. WATKINS, Physica 117B & 118B, 9 (1983).
    • (1983) Physica , vol.117-118 B , pp. 9
    • Watkins, G.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.