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Volumn , Issue , 1998, Pages 347-348
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Multiple-thickness gate oxide and dual-gate technologies for high-performance logic-embedded DRAMs
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
ARGON;
CRYSTAL IMPURITIES;
GATES (TRANSISTOR);
ION IMPLANTATION;
MOSFET DEVICES;
NITROGEN;
POLYCRYSTALLINE MATERIALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
THERMOOXIDATION;
MULTIPLE THICKNESS GATE OXIDE;
DYNAMIC RANDOM ACCESS STORAGE;
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EID: 0032265923
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (14)
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References (6)
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