Impact of neutron flux on soft errors in MOS memories

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 367-370

  Eto, Akira ^a   Hidaka, Mitsumori ^a   Okuyama, Yutaka ^a   Kimura, Katsutaka ^a   Hosono, Masayuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIT ERROR RATE; COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; FERROELECTRIC DEVICES; MOS DEVICES; NEUTRON IRRADIATION; RADIATION EFFECTS;

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); MOS MEMORIES; STATIC RANDOM ACCESS MEMORY (SRAM);

SEMICONDUCTOR STORAGE;

EID: 0032265855     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)