High performance 1.5 V, 0.10 μm gate length CMOS technology with scaled copper metallization

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 1013-1016

  Gilbert, P ^a   Yang, I ^a   Pettinato, C ^a   Angyal, M ^a   Boeck, B ^a   Fu, C ^a   VanGompel, T ^a   Tiwari, R ^a   Sparks, T ^a   Clark, W ^a   Dang, C ^a   Mendonca, J ^a   Chu, B ^a   Lucas, K ^a   Kling, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MASKS; METALLIZING; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); RANDOM ACCESS STORAGE;

COMPLEMENTARY PHASE SHIFT MASKS; GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 0032257715     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)