Optimization and effects of device parameters on the memory cell operation of 1T/1C FRAM

Journal of the Korean Physical Society

Volumn 33, Issue SUPPL. 2, 1998, Pages

  Lee, J W ^a   Lee, S ^a   Jung, D J ^a   Koo, B J ^a   Kim, K N ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032256997     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (2)

1. D. J. Jung, et al., 1997 VLSI Tech. Dig., 139 (1997).
2. S. I. Miller and R. D. Nasby, J. Appl. Phys. 70 (1991).