New dynamic model for the kink effect in InAlAs/InGaAs HEMTs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 243-246

  Somerville, Mark H ^a   Ernst, Alexander ^a   del Alamo, Jesus A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032256245     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)