Effect of backside films on Rapid Thermal Oxidation (RTO) growth on silicon wafers

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 1998, Pages 80-85

  Omar, Abdullah b ^a   Ahmad, Ibrahim b ^a  

^a Semiconductor Technology Cent   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; FILM GROWTH; ION IMPLANTATION; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; SILICON NITRIDE; THERMOOXIDATION;

RAPID THERMAL OXIDATION (RTO);

SILICON WAFERS;

EID: 0032231818     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)