Effect of cobalt salicide on SOI CMOS radiation characteristics

International Conference on Solid-State and Integrated Circuit Technology Proceedings

Volumn , Issue , 1998, Pages 59-62

  Zhang, Xing ^a   Xi, Xuemei ^a   Huang, Ru ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; ELECTRIC RESISTANCE; ELECTROMAGNETIC WAVE PROPAGATION; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; OSCILLATORS (ELECTRONIC); OXIDATION; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

COBALT SALICIDE; SOURCE/DRAIN SERIES RESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 0032226869     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)