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Volumn , Issue , 1998, Pages 579-582
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InP-based HEMTs for high speed, low power circuit applications
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Author keywords
[No Author keywords available]
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Indexed keywords
GATES (TRANSISTOR);
PARAMETER ESTIMATION;
SEMICONDUCTING INDIUM PHOSPHIDE;
THRESHOLD VOLTAGE;
TRANSCONDUCTANCE;
DIVIDE-BY-FOUR PRESCALERS;
UNITY CURRENT GAIN CUTOFF FREQUENCY;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0032226784
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (1)
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References (10)
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