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Volumn , Issue , 1998, Pages 685-688
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GaAs MOSFET's using Ga2O3(Gd2O3) as gate dielectric
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
DIELECTRIC FILMS;
ELECTRIC BREAKDOWN OF SOLIDS;
GATES (TRANSISTOR);
GROWTH (MATERIALS);
INTERFACES (MATERIALS);
ION IMPLANTATION;
LEAKAGE CURRENTS;
SEMICONDUCTING GALLIUM ARSENIDE;
SUBSTRATES;
GATE DIELECTRICS;
SEMI-INSULATING SUBSTRATES;
MOSFET DEVICES;
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EID: 0032226705
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
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Times cited : (1)
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References (11)
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