32K X 8 radiation-hardened CMOS/SONOS EEPROM

Biennial IEEE International Nonvolatile Memory Technology Conference

Volumn , Issue , 1998, Pages 20-21

  Williams, David ^a   Bishop, Ruth ^a   Loyd, Andrew ^a   Adams, Dennis ^a   Murray, James ^a   Knoll, Michael ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRON TRAPS; ELECTRON TUNNELING; INTEGRATED CIRCUIT LAYOUT; MOSFET DEVICES; NONVOLATILE STORAGE; RADIATION HARDENING; SEMICONDUCTOR DEVICE MANUFACTURE;

ERASE POWER DISSIPATION; GATE DIELECTRIC; HOT ELECTRON EFFECTS; SILICON OXIDE NITRIDE OXIDE SEMICONDUCTOR;

ROM;

EID: 0032226472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)