Phase-change optical disk with nitride interface layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3401, Issue , 1998, Pages 24-32

  Yamada, Noboru ^a   Otoba, Mayumi ^a   Nagata, Ken'ichi ^a   Furukawa, Shige'aki ^a   Narumi, Kenji ^a   Akahira, Nobuo ^a   Ueno, Fumiaki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Crystallization rate; Cyclability; Ge Sb Te; Germanium nitride; Interface layer; Optical disk; Phase change

Indexed keywords

CRYSTALLIZATION; INTERFACES (MATERIALS); JITTER; LASER BEAMS; OPTICAL RECORDING; THIN FILMS;

OPTICAL DISKS;

OPTICAL DISK STORAGE;

EID: 0032225460     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.327913     Document Type: Conference Paper

References (9)

1. 3 pseudo-binary amorphous thin films for an optical disk memory
2. Phase-change optical disk having a nitride interface layer
3. Complete erasable phase change optical disk
4. Dependence of critical cooling rate of GeSbTe recording film on the kind of protective films
5. Thermally balanced structure of phase-change optical disk for high speed and high density recording
6. High-density recording for greater than 1 GByte capacity using a 90 mm phase-change optical disk
7. Deep groove method on high density optical disk memory
8. Potential of Ge-Sb-Te Phase-change optical disks for high-data-rate recording
9. Nitrogen doping effect on phase change optical disks