AlGaInAs/InP ridge-guide lasers operating at 1.55 μm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3284, Issue , 1998, Pages 205-210

  Evans, G A ^a   Sih, J P ^a   Chou, T M ^a   Kirk, J B ^a   Butler, J K ^a   Pang, L ^a  

^a Southern Methodist University   (United States)

Author keywords

III V materials devices; Quantum well Lasers; Semiconductor Lasers

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRONS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

RIDGE-GUIDE LASERS;

QUANTUM WELL LASERS;

EID: 0032225385     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304443     Document Type: Conference Paper

References (5)

1. 1-x-yAs/InP strained-layer quantum-well lasers for subscriber loop applications
2. 1-x-yAs quantum well lasers
3. Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
4. xAs prepared by vapor-phase epitaxy
5. Determination of the refractive index of InGaAsP epitaxial layers by mode line luminescence spectroscopy