Impurity free intermixing InGaAs/GaAs strained multiple quantum well infrared photodetector

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 105-112

  Lee, Alex S W ^a   Li, E Herbert ^a   Karunasiri, Gamani ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Absorption; Interdiffusion; Leakage current; Multiple Quantum Well; Photodetector; Responsivity

Indexed keywords

ELECTRON BEAMS; EVAPORATION; IMPURITIES; INFRARED DETECTORS; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS; STRAIN;

INTERDIFFUSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032225156     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304471     Document Type: Conference Paper

References (17)

1. First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well
2. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors
3. 5:1 OnOff contract InGaAs/InP multiple quantum well fabry-perot etalon modulator
4. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors
5. High sensitivity low dark current 10 gm GaAs quantum well infrared photodetectors
6. Normal incident InGaAs/GaAs Multiple quantum well infrared detector using electron intersubband transitions
7. Effect of heat treatment on InGaAs/GaAs quantum wells
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11. Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures
12. Effects of interdiffusion of quantum well infrared photodetector
13. Tunneling emitter undoped quantum-well infrared photodetector
14. Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors
15. Segregation of Si doping in GaAs-AIGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors
16. Wavelength tuning and absorption line shape of quantum well infrared photodetectors
17. Multiple coupling effects on electron quantum well-intersubband transitions