Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 96-104

  Jelen, Christopher ^a   Slivken, Steven ^a   David, Thibaut ^a   Brown, G ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

Infrared detector; InGaAs; InP; Noise; Quantum well; QWIP; Responsivity

Indexed keywords

COMPUTATIONAL METHODS; ELECTRON TRAPS; INFRARED DETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON DIFFUSION; QUNATUM WELL INFRARED PHOTODETECTORS (QWIP);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032224437     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304470     Document Type: Conference Paper

References (11)

1. First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well
2. Current status of quantum well focal plane arrays
3. Aluminum-free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection
4. GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption
5. InGaAs/InP long wavelength quantum well infrared photodetectors
6. Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectors
7. Noise performance of bound-to-miniband transistion III-V quantum well infrared photodetectors
8. Noise characterization of novel quantum well infrared photodetectors
9. Long-wavelength quantum-well infrared detectors based on intersubband transistions in InGaAs/InP quantum wells