IGBT model validation

IEEE Industry Applications Magazine

Volumn 4, Issue 6, 1998, Pages 23-33

  Berning, David W ^a   Hefner Jr , Allen R ^a,b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK SYNTHESIS; INDUCTANCE MEASUREMENT; PARAMETER ESTIMATION; WAVEFORM ANALYSIS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032208813     PISSN: 10772618     EISSN: None     Source Type: Journal    
DOI: 10.1109/2943.730755     Document Type: Article

References (16)

1. A. R. Hefner, "Modeling Buffer Layer IGBTs for Circuit Simulation," IEEE Trans Power Elact. June, 1994, vol. 10, pp. 111-123.
2. A. R. Hefner, "A Dynamic Electro-Thermal Model for the IGBT," IEEE Trans. Industry Appl. vol. 30, p. 394 (1994); also in the Proc. 1992 IEEE Industry Applications Society Meeting, pp. 1094-1104.
3. A. R. Hefner, "A Dynamic Electro-Thermal Model for the IGBT," IEEE Trans. Industry Appl. vol. 30, p. 394 (1994); also in the Proc. 1992 IEEE Industry Applications Society Meeting, pp. 1094-1104.
4. A. R. Hefner, and D. M. Diebolt, "An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator" in IEEE Trans. Power Elec., 1994, vol. 9, p. 532; also in Proc. 1991 IEEE Power Electronics Specialists Conf., pp. 10-19.
5. A. R. Hefner, and D. M. Diebolt, "An Experimentally Verified IGBT Model Implemented in the Saber Circuit Simulator" in IEEE Trans. Power Elec., 1994, vol. 9, p. 532; also in Proc. 1991 IEEE Power Electronics Specialists Conf., pp. 10-19.
6. Sarber 4.0 User's Manual, Analogy, Inc., Beaverton, OR, 1996.
7. G.T. Oziemkiewicz, "Implementation and Development of the NIST IGBT Model in a SPICE-Based Commercial Circuit Simulator," Master's Thesis, University of Florida, available as SRC Tech. Rep. T96023, Semiconductor Research Corp., Research Triangle Park, NC.
8. MicroSim PSprice A/D Reference Manual, MicroSim Coparation, Irvine, CA, p. 210 (April 1996).
9. NIST/IEEE Working Group on Model Validation;
10. H. A. Mantooth and A. R. Hefner, "Electro-thermal simulation of PWMIGBT Inverter," Proc. 1993 IEEE Power Electronics Spec. Conf., p. 75, also in IEEE Trans. Power Elecctr. Modeling and Simulation, May 1997.
11. H. A. Mantooth and A. R. Hefner, "Electro-thermal simulation of PWMIGBT Inverter," Proc. 1993 IEEE Power Electronics Spec. Conf., p. 75, also in IEEE Trans. Power Elecctr. Modeling and Simulation, May 1997.
12. JEDEC Standard 77-A, Subclause 4.4 Insulated Gate Bipolar Transistors, Solid State Products Engineering Council, Arlington, VA.
13. A. R. Hefner and D. L. Blackburn, "An Analytical Model for the Steady-State and Transient Characteristics of the Power Insulated Gate Bipolar Transistor," Solid-State Electronics, vol. 31, 1988, p. 1513.
14. B. Janko and P. Decher, "Measuring Package and Interconnect Model Parameters Using Distributed Impedance," Proc. 14th ARFTG Conf., 1992.
15. A. R. Hefner, and D. L. Blackburn, "A Performance Layer versus Base Lifetime Reduction," IEEE Trans. Power Electronics PE-2, pp. 194-207 (1987); also in Proc 1986 IEEE Power Electronics Specialisis Conf., pp. 27-38.
16. A. R. Hefner, and D. L. Blackburn, "A Performance Layer versus Base Lifetime Reduction," IEEE Trans. Power Electronics PE-2, pp. 194-207 (1987); also in Proc 1986 IEEE Power Electronics Specialisis Conf., pp. 27-38.