Effect of gas flow rate on ultrafine SiC powders synthesized through chemical vapor deposition in the SiH4-C2H4-H2 system

Scripta Materialia

Volumn 39, Issue 12, 1998, Pages 1675-1680

  Zhu, W Z ^a   Yan, M ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; FLOW OF FLUIDS; MICROSTRUCTURE; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PARTICLE SIZE ANALYSIS; PHYSICAL PROPERTIES; SILICON CARBIDE; SYNTHESIS (CHEMICAL);

GAS FLOW RATE; GAS PHASE REACTION;

POWDERS;

EID: 0032208284     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6462(98)00372-8     Document Type: Article

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