Deposition of an energetic Al cluster on Si(111) substrate: A molecular dynamics simulation

Modelling and Simulation in Materials Science and Engineering

Volumn 6, Issue 6, 1998, Pages 709-716

  He, Li ^a   Xia, Zongning ^a   Zhang, Hao ^a   Feng, Jiayou ^a   Lu, Yunwen ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPUTATIONAL METHODS; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DEPOSITION; DIFFUSION IN SOLIDS; MOLECULAR DYNAMICS; MORPHOLOGY; SUBSTRATES; THERMAL EFFECTS;

BORN-MAYER-HIGGINS THREE-BODY POTENTIAL; STILLINGER-WEBER THREE-BODY POTENTIAL;

SILICON;

EID: 0032208187     PISSN: 09650393     EISSN: None     Source Type: Journal    
DOI: 10.1088/0965-0393/6/6/003     Document Type: Article

References (8)

1. Yamada I and Takaoka G H 1993 Japan. J. Appl. Phys. Part 1 32 (5A) 2121
2. Yamada I, Usui H, Tanaka S, Dahmen U and Westmacott K H 1990 J. Vac. Sci. Technol. A 8 1443
3. Yamada I et al 1987 Proc. 11th. Symp. on Ion Source and Ion Assisted Technology (ISIAT'87) (Tokyo, 1987) p 297
4. Yamada I et al 1987 Proc. 11th Symp. on Ion Source and Ion Assisted Technology (ISIAT'87) (Tokyo, 1987) p 337
5. Levenson L L, Swartzlander A B, Yahashi A, Usui H and Yomada I 1990 J. Vac. Sci. Technol. A 8 1447
6. Levenson L L, Usui H, Yamada I, Takagi T and Swartzlander A B 1989 J. Vac. Sci. Technol. A 7 1206
7. Stillinger F H and Weber T A 1985 Phys. Rev. B 31 5262
8. Zirl D M 1990 J. Am. Ceram. Soc. 73 2848