RF characterization of CMOS and BiCMOS advanced technologies at wafer level

Microelectronic Engineering

Volumn 40, Issue 3-4, 1998, Pages 195-206

  Carbonero, J L ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; SPURIOUS SIGNAL NOISE;

RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC);

CMOS INTEGRATED CIRCUITS;

EID: 0032208037     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00271-8     Document Type: Article

References (34)

1. J.L. Carbonero, R. Joly, G. Morin, B. Cabon, "On-Wafer High-Frequency Measurement Improvement", IEEE Proc. ICMTS, 1994, pp. 168-173.
2. N. Camilleri, J. Costa, D. Lovelace, and D. Ngo, "Silicon MOSFET's, the Microwave Device Technology for the 90S", IEEE MTT-S Digest, 1993, pp. 545-548.
3. H. Itoh, T. Okabe, and M. Nagata, "Extremely High Efficiency UHF Power MOSFET for Handy Transmitter", IEEE IEDM Digest, 1983, pp. 95-98.
4. C. Raynaud et al.," High-Frequency Performance of Submicrometer Channel-Length Silicon MOSFET's", IEEE Electron Device Letters, Vol. 12, No. 12, Dec. 1991, pp. 667-669.
5. T. Suzaki et al., "Si Bipolar Chip Set for 10-Gb/s Optical receiver", IEEE J. of solid-state Circuits, Vol. 27, No. 12, Dec. 1992, pp. 1781-1786.
6. H. M. Rein et al., "Multi-Gigabit-per-Second Silicon Bipolar IC's for Future Optical-Fiber Systems", IEEE J. Solid-State Circuits, Vol. 23, No. 3, Jun. 1991, pp. 636-675.
7. M. Sugiyama et al., "A 40 GHz Ft Si Bipolar Transistor LSI Technology", IEEE IEDM Digest, 1989, pp.221-224.
8. F. Rerat, J.L. Carbonero, G. Morin, B. Cabon, "Automated Measurement Procedures of Three-Port and Four-Port Devices on Silicon Wafers", Proc. ARFTG, spring 1997, pp. 122-131.
9. J.L. Carbonero, Développement des Méthodes de Mesures en Hyperfréquences sur Tranches de Silicium et Application à la Caractérisation des Technologies CMOS et BiCMOS Sub-Microniques, Ph. D. Dissertation, Institut National Polytechnique de Grenoble (France), 1996.
10. P. J. van Wijnen, On the Characterization and Optimization of High-Speed Silicon Bipolar Transistors, Paul J. van Wijnen, Ph. D. Dissertation, Cascade Microtech Inc., Beaverton, Oregon, USA, 1991/1992.
11. K. Kurokawa., "Power Wave and the Scatering Matrix", IEEE Trans. on MTT, Vol. 13, No 2, March 1965, pp. 194-202.
12. D. C. Youla, "On Scatering Matrices Normalized to Complex Port Numbers", Proc. of the IRE, Vol. 49, July 1961, p. 1221.
13. K. Chang, Microwave Solid-State Circuits and Applications, John Wiley & Sons, Inc, New York, 1994.
14. D. A. Frickey, "Conversion Between S, Z, Y, h, ABCD and T Parameters which are Valid for Complex Source and Load Impedances", IEEE Trans. on MTT, Vol. 42, No. 2, Feb. 1994, pp. 205-211.
15. J. L. Carbonero, G. Morin, and B. Cabon, "A Full Automatic On-Wafer High Frequency Measurement Station in Industrial Environment for Silicon Devices", Proc. ARFTG, Spring 1995, pp. 83-91.
16. E. M. Godshalk, J. Burr and J. Williams, "An Air Coplanar Wafer Probe", Proc. ARFTG, Spring 1994, pp. 70-75.
17. J.L. Carbonero, G. Morin, B. Cabon, "Comparison Between Beryllium-Copper and Tungsten High Frequency Air Coplanar Probes", IEEE MTT-S Digest, 1995, pp. 1475-1478.
18. J. L. Carbonero, G. Morin, and B. Cabon, "Comparison Between Beryllium-Copper and Tungsten High Frequency Air Coplanar Probes", IEEE Trans. on MTT, Vol. 43, No 12, December 1995, pp. 2786-2793.
19. P.H. Singer, "The Dual Challenge of Wafer Probing", Semiconductor International, Dec 1989, pp. 86-89.
20. M Schell and J. Sanders, "Probe-Card Design and Maintenance For Maximum Wafer-Probe Yield", Microelectronics Manufacturing and Testing, Sep 1988.
21. "Technical Information Applying to both Epoxy Ring and Blade Probe Cards", Technical Report, Micro-Probe Inc., San Diego, California.
22. K.J. Silvonen, "A General Approach to Network Analyzer Calibration", IEEE Trans. on MTT, Vol. 40, No. 4, Apr. 1992, pp. 754-759.
23. G. Gronau, "Scattering-Parameter Measurement of Microstrip Device", Microwave Journal, 1992, pp. 82.
24. A. Davidson, K. Jones, and E. Strid, "LRM and LRRM Calibrations with Automatic Determination of Load Inductance", Proc. ARFTG, Fall 1990, pp. 57-63.
25. R.B. Marks, "Multi-Line Calibration for MMIC Measurement", Proc. ARFTG, Fall 1990, pp. 47-56.
26. J. Hänseler, H. Schinagel, and H. L. Zapf, "Test Structures and Measurement Techniques for the Characterization of the Dynamic Behaviour of CMOS Transistors on Wafer in the GHz Range", IEEE Proc. ICMTS, 1992, pp. 90-93.
27. M. C. A. M. Koolen, "On-Wafer High-Frequency Device Characterization", Proc. ESSDERC, 1992, pp. 679-686.
28. H. Cho and D.E. Burk, "A Three-step Method for the De-Embedding of High-Frequency S-Parameter Measurements", IEEE Trans. on ED, Vol. 38, No 6, Jun. 1991, pp.1371-1375.
29. K. Lu, P. Perry, and T. J. Brazil, "A Direct, Reliable, Measurement-Based Technique for the Extraction of an On-Chip HBT Dummy Structure Equivalent Circuit", Proc. ICMTS, March 1989, pp. 27-30.
30. S. Lee, B. R. Ryum, and S. W. Kang, "A New Parameter Extraction Technique for Small-Signal Equivalent Circuit of Polysilicon Emitter Bipolar Transistors", IEEE Trans. on ED, Vol. 41, No.2, Feb. 1994, pp. 233-238.
31. S. P. Voinigescu et al. "A Scalable High-Frequency Noise Model for Bipolar Transistors with Application to Optimal Transistor Sizing for Low-Noise Amplifier Design", IEEE Journal of Solid-State Circuits, Vol. 32, No. 9, Sept. 1997, pp. 1430-1439.
32. J. L. Carbonero, D. Gloria, G. Morin, and B. Cabon, "Linear and Noise Characterization of Silicon Devices in Industrial Environment with a Full Automatic On-Wafer High Frequency Measurement Station", Proc. BEMC, 1995, pp. 5.1-5.4.
33. S. J. Mason, "Power Gain in Feedback Amplifier", Trans. on the IRE, Jun. 1954, pp. 20-25.
34. D. Lovelace, J. Costa, and N. Camilleri, "Extracting Small-Signal Model Parameters of Silicon MOSFET Transistors", IEEE MTT-S Digest, 1994, pp. 865-868.