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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

Electrical characterization of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

(4) Nittono, Takumi a Fukai, Yoshino K a Hyuga, Fumiaki a Maeda, Narihiko b

a NTT CORPORATION (Japan)

b NTT Basic Research Laboratories (Japan)

Author keywords

Crystal defect; Gallium arsenide; Heterointerface; Indium gallium phosphide; Unintentional carrier

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL DEFECTS; HALL EFFECT; MAGNETIC FIELD MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VOLTAGE MEASUREMENT;

CARRIER ACCUMULATION;

HETEROJUNCTIONS;

EID: 0032207750 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1288 Document Type: Article

Times cited : (2)

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