High-quality conformal silicon oxide films prepared by multi-step sputtering PECVD and chemical mechanical polishing

Journal of Electronic Materials

Volumn 27, Issue 11, 1998, Pages 1262-1267

  Park, Min ^a   Yu, Hyun Kyu ^a   Koo, Jin Gun ^a   Jang, Jin ^b   Nam, Kee Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Argon plasma treatment; Chemical mechanical polishing (CMP); Film stress; Gap filling; Planarization; Silicon oxide film

Indexed keywords

ARGON; CHEMICAL POLISHING; FILM GROWTH; FILM PREPARATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SPUTTER DEPOSITION; STRESS CONCENTRATION;

CHEMICAL MECHANICAL POLISHING (CMP);

SEMICONDUCTING FILMS;

EID: 0032207689     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0080-9     Document Type: Article

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