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Volumn 37, Issue 11 PART A, 1998, Pages

A new silicon field-effect transistors with Two-Hole-Transport-Mode (HTM) channels grown by Molecular Beam Epitaxy (MBE)

Author keywords

MBE; MESFET; MODFET; Two hole transport mode channel

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

HOLE-TRANSPORT-MODE (HTM) CHANNELS;

MESFET DEVICES;

EID: 0032207197 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l1290 Document Type: Article

Times cited : (1)

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