Mechanism of atomic layer epitaxy of AlAs

Journal of Crystal Growth

Volumn 194, Issue 1, 1998, Pages 16-24

  Hirose, S ^a   Yamaura, M ^a   Yoshida, A ^a   Ibuka, H ^a   Hara, K ^a   Munekata, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlAs; Atomic layer epitaxy; Ethyldimethylamine alane; Self limiting growth

Indexed keywords

ALUMINUM; CARBON; COMPOSITION EFFECTS; EPITAXIAL GROWTH; METALLIC FILMS; MONOLAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ADSORBATE INHIBITION MODEL; ALUMINUM ARSENIDE; ATOMIC LAYER EPITAXY (ALE); ETHYLDIMETHYLAMINE ALANE;

SEMICONDUCTING FILMS;

EID: 0032207133     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00602-2     Document Type: Article

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