A new charge pumping model considering bulk trap states in polysilicon thin film transistor

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 1897-1903

  Kim, Kee Jong ^a   Park, Won Kyu ^b   Kim, Seong Gyun ^b   Lim, Keong Mun ^b   Lim, In Gon ^b   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; CURRENT DENSITY; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

BULK STATE MODELS; FIELD-EFFECT CONDUCTANCE METHODS; FREE ELECTRON CONCENTRATION; INTERFACE STATE MODELS;

THIN FILM TRANSISTORS;

EID: 0032206709     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00156-7     Document Type: Article

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