Sulfur diffusion into GaAs/Ga0.7Al0.3As heterostructures for device applications

Applied Physics A: Materials Science and Processing

Volumn 67, Issue 5, 1998, Pages 579-583

  Nishi, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CATHODES; DEFECTS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; LUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SULFUR; X RAY DIFFRACTION ANALYSIS;

CATHODE LUMINESCENCE INTENSITY ANALYSIS; HETERO INTERFACE DEFECTS;

DIFFUSION;

EID: 0032205984     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050825     Document Type: Article

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