Synthesis of BaAl2Si2O8 from solid Ba-Al-Al2O3-SiO2 precursors: Part III. The structure of BaAl2Si2O8 formed by annealing at ≤650 °C and at 1650 °C

Journal of Materials Research

Volumn 13, Issue 11, 1998, Pages 3122-3134

  Zhang, Xiao Dong ^a   Sandhage, Kenneth H ^a   Fraser, Hamish L ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; HEAT TREATMENT; STACKING FAULTS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

ANTIPHASE BOUNDARIES; BARIUM ALUMINUM SILICON OXIDES; POLYMORPH;

SILICON COMPOUNDS;

EID: 0032205205     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1998.0425     Document Type: Article

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