An 8-bit-resolution, 360-μs write time nonvolatile analog memory based on Differentially Balanced Constant-Tunneling-Current Scheme (DBCS)

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 11, 1998, Pages 1758-1762

  Kim, Kyu Hyoun ^a   Lee, Kwyro ^b   Jung, Tae Sung ^a   Suh, Kang Deog ^a  

^a SAMSUNG Electronics   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; INTEGRATED CIRCUIT MANUFACTURE;

DIFFERENTIALLY BALANCED CONSTANT-TUNNELING-CURRENT SCHEMES (DBCS);

NONVOLATILE STORAGE;

EID: 0032204665     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.726571     Document Type: Article

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