Mechanism of improved thermal stability of cobalt suicide formed on polysilicon gate by nitrogen implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5854-5860

  Sun, Wein Town ^b   Lee, Hai Ming ^b   Liaw, Ming Chi ^a   Hsu, Charles Ching Hsiang ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Agglomeration; Auger electron spectroscopy (AES); Cobalt suicide; Nitrogen (N2+) implantation (I I); Rutherford backscattering spectrometry (RBS); Thermal stability; Transmission electron microscopy (TEM)

Indexed keywords

AGGLOMERATION; AUGER ELECTRON SPECTROSCOPY; COMPOSITION EFFECTS; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; ION IMPLANTATION; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE;

SEMICONDUCTING FILMS;

EID: 0032203390     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5854     Document Type: Article

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