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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6210-6214

Characterization of RF-enhanced DC sputtering to deposit tin-doped indium oxide thin films

(3) Futagami, Toshiro a Shigesato, Yuzo b Yasui, Itaru a

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b AOYAMA GAKUIN UNIVERSITY (Japan)

Author keywords

ITO; Langmuir probe; Optical emission spectroscopy; RF discharge; RF plasma; Sputtering deposition; X ray diffraction

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; INDIUM COMPOUNDS; LIGHT EMISSION; MAGNETRON SPUTTERING; PLASMA APPLICATIONS; PROBES; SPUTTER DEPOSITION; TIN; X RAY DIFFRACTION ANALYSIS;

INDIUM OXIDE; LANGMUIR PROBE;

CONDUCTIVE FILMS;

EID: 0032203308 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.6210 Document Type: Article

Times cited : (12)

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