Seedless crystallization of levitated Ge and GaSb spherical melts under microgravity

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 SUPPL. B, 1998, Pages

  Nakata, Josuke ^a   Kuratani, Noriaki ^a   Tomozawa, Hidemasa ^a   Nishimura, Yuichi ^a   Yokogawa, Naohiro ^a   Inagawa, Ikuo ^a  

^a Kyoto Semiconductor Corporation   (Japan)

Author keywords

GaSb; Ge; Melt structure; Microgravity; Seedless melt crystallization; Spherical melt

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLIZATION; LEVITATION MELTING; MICROGRAVITY PROCESSING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLIDIFICATION; X RAY CRYSTALLOGRAPHY;

GALLIUM ANTIMONIDE; LAUE SPOTS; SEEDLESS CRYSTALLIZATION;

CRYSTAL GROWTH FROM MELT;

EID: 0032203171     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1396     Document Type: Article

References (3)

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