Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source

Thin Solid Films

Volumn 333, Issue 1-2, 1998, Pages 137-141

  Jang, Tae Woong ^a   Moon, Won ^a   Baek, Jong Tae ^b   Ahn, Byung Tae ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Aluminum; Chemical vapor deposition; Metallization; Organometallic vapor deposition

Indexed keywords

ALUMINUM; FILM GROWTH; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PYROLYSIS; SUBSTRATES; TEXTURES;

ALUMINUM NITRIDE; FILM TEXTURES;

THIN FILMS;

EID: 0032202456     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(98)00855-4     Document Type: Article

References (22)

1. M.J. Cooke, R.A. Heinecke, R.C. Stern, J.W.C. Maes, Solid State Technol. 25 (1982) 62.
2. D.R. Biswas, C. Gosh, R.L. Layman, J. Electrochem. Soc. 130 (1983) 234.
3. M.L. Green, R.A. Levy, R.G. Nuzzo, E. Coleman, Thin Solid Films 114 (1984) 367.
4. R.A. Levy, P.K. Gallogher, R. Contolini, F. Schrey, J. Electrochem. Soc. 132 (1985) 457.
5. H.W. Piekaar, L.F.Tz. Kwakman, E.H.A. Granneman, Proc. 6th Int. IEEE VLSI Multilevel Interconnection Conf., 1989, p. 122.
6. S. Wolff, J. Chang, J. Estabil, S. Luce, E. Granneman, Proc. 8th Int. IEEE VLSI Multilevel Interconnection Conf., 1991, p. 307.
7. A. Konecni, G.A. Dixit, N. Russell, J.D. Luttmer, R.H. Havemann, MRS 1997 Spring Meeting Abstracts, San Francisco, CA, 1997, p. 198.
8. C. Sasaoka, K. Mori, Y. Kato, A. Usui, Appl. Phys. Lett. 55 (1989) 741.
9. T. Shinzawa, K. Sugai, S. Kishida, H. Okabayashi, in: S.S. Wong, S. Furukawa (Eds.), Tungsten and Other Advanced Metals for VLSI Applications V, Materials Research Society, Pittsburgh, 1990, p. 377.
10. W.L. Gladfelter, D.C. Boyd, K.F. Jensen, Chem. Mater. 1 (1989) 339.
11. M.G. Simmonds, W.L. Gladfelter, H. Li, P.H. McMurry, MRS Symp. Proc. 282 (1993) 317.
12. J.S. Han, K.F. Jensen, Y. Senzaki, W.L. Gladfelter, K.F. Jensen, MRS Symp. Proc. 282 (1993) 173.
13. J.S. Han, K.F. Jensen, Y. Senzaki, W.L. Gladfelter, Appl. Phys. Lett. 64 (1994) 425.
14. D.B. Beach, S.E. Blum, F.K. LeGouse, J. Vac. Sci. Technol. A 7 (1989) 3117.
15. K. Werner, A.P. David, RCA Rev., June (1970) 187.
16. M.G. Simmonds, E.C. Phillips, J.W. Hwang, W.L. Gladfelter, Chemtronics 5 (1991) 155.
17. M.G. Simmonds, W.L. Gladfelter, R. Nagaraja, W.W. Szymanski, K.H. Ahn, P.H. McMurry, J. Vac. Sci. Technol. A 9 (1991) 2782.
18. G.N. Nechiporenko, L.B. Rozenberg, A.S. Bull. Acad. Sci. USSR 24 (1975) 1584.
19. J.M. Mundenar, R. Murphy, K.D. Tsuei, E.W. Plummer, Chem. Phys. Lett. 143 (1988) 593.
20. K.I. Lee, Y.S. Kim, S.K. Joo, J. Electrochem, Soc. 139 (1992) 3578.
21. K.P. Cheung, C.J. Case, R. Liu, et al., Proc. 7th Int. IEEE VLSI Multilevel Interconnection Conf., 1990, p. 303.
22. B.E. Bent, R.G. Nuzzo, L.H. Dubois, J. Am. Chem. Soc. 111 (1989) 1634.