Electron irradiation and thermal annealing effect on GaAs solar cells

Solar Energy Materials and Solar Cells

Volumn 55, Issue 4, 1998, Pages 313-322

  Xianbi, Xiang ^a   Wenhui, Du ^a   Xiulan, Chang ^a   Xianbo, Liao ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaAs; Irradiation; Solar cells

Indexed keywords

ANNEALING; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; HETEROJUNCTIONS; HOLE TRAPS; IRRADIATION; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SHORT CIRCUIT CURRENTS; THERMAL EFFECTS;

FOUR ELECTRON TRAPS; IRRADIATION INDUCED DEGRADATION;

SOLAR CELLS;

EID: 0032202072     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(98)00037-3     Document Type: Article

References (7)

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4. A. Meulenberg, Photo-Recovery of Electron-Irradiated GaAs Solar Cells, NASA Conf. Publication 3324 Space Photovoltaic Research and Technology, 1995, 106.
5. Takashi Noguchi, Masato Vesugi, Technical Digest Int. PVSEC-5, 1990 557.
6. Li Biao, Xiang Xianbi, You Zhipu, Xu Ying, Fei Xueying, Chin. J. Semicond. 16 (10) (1995) 741.
7. Xiang Xianbi, Du Wenhui, Chang Xiulan, Liao Xianbo, Improvement of parameters in GaAs solar cells by low temperature annealing; to be published.