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0026896259
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Photonic memory switch: Monolithic integration of a voltage-controlled bistable laser diode and an optical gate
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H. Tsuda, T. Kurokawa, H. Uenohara, and H. Iwamura, "Photonic memory switch: Monolithic integration of a voltage-controlled bistable laser diode and an optical gate," IEEE Photon. Technol. Lett., vol. 4, pp. 760-762, 1992.
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Tsuda, H.1
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Iwamura, H.4
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0027541125
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Optical nonlinear characteristics of a side-injection light-controlled laser diode with a multiple-quantum-well saturable absorption region
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K. Nonaka, H. Tsuda, H. Uenohara, H. Iwamura, and T. Kurokawa, "Optical nonlinear characteristics of a side-injection light-controlled laser diode with a multiple-quantum-well saturable absorption region," IEEE Photon. Technol. Lett., vol. 5, pp. 139-141, 1993.
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Nonaka, K.1
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Kurokawa, T.5
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3
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0012765769
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All-optical demultiplexing using ultrafast four-wave-mixing in a semiconductor laser amplifier at 20 Gbit/s
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paper ThP12.2
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R. Ludwig and G. Raybon, "All-optical demultiplexing using ultrafast four-wave-mixing in a semiconductor laser amplifier at 20 Gbit/s," in Proc. ECOC'93, 1993, pp. 57-60, paper ThP12.2.
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Ludwig, R.1
Raybon, G.2
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4
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0028496962
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All-optical pulse width and wavelength conversion at 10 Gbit/s
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Sept.
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K. A. Rauschenbach, K. L. Hall, J. C. Livas, and G. Raybon, "All-optical pulse width and wavelength conversion at 10 Gbit/s," IEEE Photon. Technol. Lett., vol. 6, pp. 1130-1132, Sept. 1994.
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Rauschenbach, K.A.1
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Raybon, G.4
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5
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0029390430
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Simultaneous time- and wavelength-domain optical demultiplexing of NRZ signals by using a side-injection light-controlled bistable laser diode
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K. Nonaka and T. Kurokawa, "Simultaneous time- and wavelength-domain optical demultiplexing of NRZ signals by using a side-injection light-controlled bistable laser diode," Electron. Lett., vol. 31, no. 21, pp. 1865-1866, 1995.
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Nonaka, K.1
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3843098468
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Error-free 2.5 Gbit/s operation of a semi-insulating buried heterostructure side-injection light-controlled bistable laser diode
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T. Tadokoro, F. Kobayashi, K. Kishi, K. Nonaka, C. Amano, Y. Itoh, H. Mori, and T. Kurokawa, "Error-free 2.5 Gbit/s operation of a semi-insulating buried heterostructure side-injection light-controlled bistable laser diode," Appl. Phys. Lett., vol. 70, no. 7, pp. 2946-2648, 1997.
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Kurokawa, T.8
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7
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85070844763
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Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA)
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B. Fermier, P. Brosson, D. Bayart, P. Doussiere, R. Beaumont, F. Leblond, P. Morin, G. Daloura, J. Jacquet, E. Derouin, and P. Garabedian, "Fast (300 ps) polarization insensitive semiconductor optical amplifier switch with low driving current (70 mA)," in 13th IEEE Int. Semiconductor Laser Conf., 1992, vol. E-5, pp. 130-131.
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Garabedian, P.11
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8
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40 Gbit/s operation of InGaAs MQW electro-absorption modulator with very low driving-voltage
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paper WeD.3.5
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K. Yoshino, K. Wakita, I. Kotaka, S. Kondo, Y. Noguchi, S. Kawano, N. Takachio, T. Otuji, Y. Imai, and T. Enoki, "40 Gbit/s operation of InGaAs MQW electro-absorption modulator with very low driving-voltage," in ECOC'96, 1996, pp. 203-206, paper WeD.3.5.
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Yoshino, K.1
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Kondo, S.4
Noguchi, Y.5
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Takachio, N.7
Otuji, T.8
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Enoki, T.10
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9
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11344280360
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Theoretical investigation of ultimate response of multiple quantum well voltage-controlled bistable laser diodes
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paper ThD1-4
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H. Uenohara, R. Takahashi, Y. Kawamura, and H. Iwamura, "Theoretical investigation of ultimate response of multiple quantum well voltage-controlled bistable laser diodes," in IOOC'95, 1995, vol. 3, pp. 92-93, paper ThD1-4.
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Uenohara, H.1
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Iwamura, H.4
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