Doping level and type of GaInP saturable absorbing layers for realizing pulsating 650-nm-band AlGaInP laser diodes

IEEE Photonics Technology Letters

Volumn 10, Issue 10, 1998, Pages 1368-1370

  Onishi, Toshikazu ^a   Adachi, Hideto ^a   Kidoguchi, Isao ^a   Mannoh, Masaya ^a   Takamori, Akira ^a   Narukawa, Yukio ^b   Kawakami, Yoichi ^b   Fujita, Shigeo ^b  

^a PANASONIC CORPORATION   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

AlGaAInP laser diodes; Saturable absorbing layers; Self sustained pulsation; Time resolved photoluminescence spectroscopy

Indexed keywords

EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

SATURABLE ABSORBING LAYERS; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL) SPECTROSCOPY;

SEMICONDUCTOR LASERS;

EID: 0032188327     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.720263     Document Type: Article

References (5)

1. M. Mannoh, J. Hoshina, S. Kamiyama, H. Ohta, Y. Ban, and K. Ohnaka, "High power and high-temperature operation of GaInP/AlaInP strained multiple quantum well lasers," Appl. Phys. Lett., vol. 62, pp. 1173-1175, 1993.
2. T. Ikegami, Y. Bessho, R. Hiroyama, H. Kase, S. Honda, M. Shono, K. Yodoshi, T. Yamaguchi, and T. Niina, "Self-pulsation 630 nm-band tensile strained MQW AlGaInP laser diodes," in Proc. Conf. Lasers and Electro-optics, Anaheim, CA, 1994, p. 279.
3. M. Yamada, "A theoretical analysis of self-sustained pulsation phenomena in narrow-stripe semiconductor lasers," IEEE J. Quantum Electron., vol. 29, pp. 1330-1336, 1993.
4. H. Adachi, S. Kamiyama, I. Kidoguchi, and T. Uenoyama, "Self-sustained pulsation in 650-nm-band AlGaInP visible-laser diodes with highly doped saturable absorbing layer," IEEE Photon. Technol. Lett., vol. 7, pp. 1406-1408, 1995.
5. I. Kidoguchi, H. Adachi, T. Fukuhisa, M. Mannoh, and A. Takamori, "Stable operation of self-sustained pulsation in 650- nm-band AlGaInP visible lasers with highly doped saturable absorbing layer," Appl. Phys. Lett., vol. 68, pp. 3543-3545, 1996.