Sublimation studies of SiC by using a quadrupole mass spectrometer

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3556-3560

  Sadowski, H ^a   Helbig, R ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC HEATING; GRAIN SIZE AND SHAPE; MASS SPECTROMETERS; MOLECULES; PARTIAL PRESSURE; SUBLIMATION; THERMODYNAMIC STABILITY;

CLAUSIUS-CLAPEYRON EQUATION; LELY CRYSTAL GROWTH PROCESS; TANTALUM KNUDSEN CELL;

SILICON CARBIDE;

EID: 0032186756     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838842     Document Type: Article

References (12)

1. M. Ruff, H. Mitlehner, and R. Helbig, IEEE Trans. Electron Devices, ED-41, 1040 (1994).
2. M. Bhatnager and B. J. Baliga, IEEE Trans. Electron Devices, ED-40, 645 (1993).
3. R. I. Scace and G. A. Slack, in Silicon Carbide-A High Temperature Semiconductor, J. R. O'Connor and J. Smiltens, Editors, p. 24, Pergamon Press, Oxford (1960).
4. R. C. Glass, D. Henshall, V. F. Tsvetkov, and C. H. Carter, Jr., Phys. Status Solidi B, 202, 149 (1997).
5. J. Drowart, G. De Maria, and M. G. Ingrahm, J. Chem. Phys., 29, 1015 (1958).
6. J. Drowart and G. De Maria, in Silicon Carbide-A High Temperature Semiconductor, J. R. O'Connor and J. Smiltens, Editors, p. 16, Pergamon Press, Oxford (1960).
7. S. K. Lilov, Cryst. Res. Technol., 28, 503 (1993).
8. S. K. Lilov, Diamond Relat. Mater., 4, 1331 (1995).
9. R. E. Honig, J. Chem. Phys., 22, 126 (1954).
10. D. Hofmann, Yu. N. Karpov, Yu. N. Makarov, E. N. Mokhov, M. G. Ramm, M. S. Ramm, A. D. Roenkov, and Yu. A. Vodakov, Inst. Phys. Conf. Ser., 142, 29 (1995).
11. Yu. A. Vodakov, E. N. Mokhov, M. G. Ramm, and A. D. Roenkov, Krist. Tech., 14, 729 (1979).
12. R. E. Honig, J. Chem. Phy., 22, 1610 (1954).