Correlation of compensation in Si-doped GaAs between electrical and optical methods

Solid State Communications

Volumn 108, Issue 7, 1998, Pages 457-461

  Hudait, Mantu Kumar ^a,b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

Author keywords

A. semiconductors; B. photoluminescence; C. optical properties

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

COMPLEX-DEFECT TRANSITIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032184128     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00386-X     Document Type: Article

References (20)

1. Van Zeghbroeck, B.J., Patrick, W., Meier, H. and Vettiger, P., IEEE Electron Devices Lett., EDL-8, 1987, 118.
2. Swaminathan, V., Sturge, M.D. and Zilko, J.L., J. Appl. Phys., 52, 1981, 6306.
3. Schubert, E.F., Göbel, E.O., Horikoshi, Y., Ploog, K. and Queisser, H.J., Phys. Rev., B30, 1984, 813.
4. Oh-hory, T., Itoh, H., Tanaka, H., Kasi, K., Takikawa, M. and Komeno, J., J. Appl. Phys., 61, 1987, 4603.
5. Adachi, S., J. Appl. Phys., 63, 1988, 64.
6. De Paula, Ana M., Medeiros-Ribeiro, G. and De Oliveira, A.G., J. Appl. Phys., 76, 1994, 8051.
7. Venkatasubramanian, R., Patel, K. and Ghandhi, S.K., J. Crystal Growth, 94, 1989, 34.
8. Souza, P.L. and Rao, E.V.K., J. Appl. Phys., 67, 1990, 7013.
9. Visser, E.P., Tang, X., Wieleman, R.W. and Giling, L.J., J. Appl. Phys., 69, 1991, 3266.
10. Maguire, J., Murray, R., Newman, R.C., Beall, R.B. and Harris, J.J., Appl. Phys. Lett., 50, 1987, 516.
11. Bass, S.J., J. Crystal Growth, 47, 1979, 613.
12. Schubert, E.F., Doping in III-V Semiconductors. Cambridge University Press, Cambridge, 1993.
13. Walukiewicz, W., Appl. Phys. Lett., 54, 1989, 2094.
14. Walukiewicz, W., Phys. Rev., B41, 1990, 10218.
15. Theis, T.N., Mooney, P.M. and Wright, S.L., Phys. Rev. Lett., 60, 1988, 361.
16. Fushimi, H., Shinohara, M. and Wada, K., J. Appl. Phys., 81, 1997, 1745.
17. Burstein, E., Phys. Rev., 93, 1954, 632; Moss, T.S., Proc. Phys. Soc. London, B67, 1954, 775.
18. Burstein, E., Phys. Rev., 93, 1954, 632; Moss, T.S., Proc. Phys. Soc. London, B67, 1954, 775.
19. Williams, E.W. and Barry Bebb, H., in Semiconductors and Semimetals (Edited by R.K. Willardson and A.C. Beer), Vol. 8, Chap. 5. Academic, New York, 1972.
20. Tang, X., Lochs, H.G.M., Hageman, P.R., de Croon, M.H.J.M., Giling, L.J. and Bons, A.J., J. Crystal Growth, 98, 1989, 827.