Properties of palladium silicide thin films obtained by vacuum rapid thermal annealing of r.f. sputtered Pd films on Si

Vacuum

Volumn 51, Issue 2, 1998, Pages 177-180

  Beshkov, G ^a   Dimitrov, D B ^a   Koprinarova, J ^a   Gesheva, K ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC RESISTANCE; METALLIC FILMS; PALLADIUM COMPOUNDS; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON WAFERS; SPUTTER DEPOSITION; THIN FILMS;

PALLADIUM SILICIDE;

CONDUCTIVE FILMS;

EID: 0032183658     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00154-7     Document Type: Article

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